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Strongly bound excitons dominate electronic relaxation in resonantly excited twisted bilayer graphene

机译:强烈束缚的激子共振主导电子弛豫   激发扭曲的双层石墨烯

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摘要

When two sheets of graphene stack in a twisted bilayer graphene (tBLG)configuration, the resulting constrained overlap between interplanar 2porbitals produce angle-tunable electronic absorption resonances. Using a novelcombination of multiphoton transient absorption (TA) microscopy and TEM, weresolve the resonant electronic structure, and ensuing electronic relaxationinside single tBLG domains. Strikingly, we find that the transient electronicpopulation in resonantly excited tBLG domains is enhanced many fold, forming amajor electronic relaxation bottleneck. 2-photon TA microscopy shows thisbottleneck effect originates from a strongly bound, dark exciton state lying0.37 eV below the 1-photon absorption resonance. This stable coexistence ofstrongly bound excitons alongside free-electron continuum states has not beenpreviously observed in a metallic, 2D material.
机译:当两张石墨烯以扭曲的双层石墨烯(tBLG)构造堆叠时,平面间2孔之间的约束重叠部分会产生角度可调的电子吸收共振。使用多光子瞬态吸收(TA)显微镜和TEM的新型组合,解决了共振电子结构,并随后在单个tBLG域内实现了电子弛豫。令人惊讶的是,我们发现共振激发的tBLG域中的瞬态电子种群增强了许多倍,形成了主要的电子弛豫瓶颈。 2光子TA显微镜显示此瓶颈效应源于1光子吸收共振以下0.37 eV的强结合暗激子态。在金属二维材料中,以前从未观察到强键合激子与自由电子连续态的这种稳定共存。

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